GaN on SiC Transistors

405 GaN on SiC Transistors from 14 Manufacturers meet your specification.

GaN on SiC (Silicon Carbide) Transistors from the leading manufacturers are listed below. Use the filters below to narrow down on the antenna that meets your spec.

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  • Subcategory : GaN on SiC Transistor  
Description: 250 Watts GaN on SiC HEMT from 2490 to 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
53.98 dBm
Power(W):
250 W
Gain:
13.5 to 14 dB
Supply Voltage:
48 V
more info
Description: GaN Power Transistors from 1030 to 1090 MHz
Application Industry:
Radar, Aerospace & Defence
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power(W):
1100 W
Supply Voltage:
50 V
more info
Description: 15 W GaN High Electron Mobility Transistor from DC to 6 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Package:
SMT
more info
Description: Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description: 120 Watts, 50 Volts, 300 us, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 to 51.76 dBm
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description: 300 W RF GaN Power Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2400 to 500 MHz
Power:
54.77 dBm
Power(W):
300 W
Gain:
14.9 to 15.3 dB
Supply Voltage:
50 V
more info
Description: 570 W GaN Power Transistor from 1295 to 1305 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1295 to 1305 MHz
Power:
57.51 to 57.63 dBm
Power(W):
563 to 580 W
Supply Voltage:
50 V
more info
Description: GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54 dBm
Power(W):
90 W
Gain:
11 dB
Supply Voltage:
50 V
more info
Description: 30 W GaN High Electron Mobility Transistor from DC to 8 GHz
Application Industry:
SATCOM, Broadcast, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Package:
SMT
more info
Description: Discrete Power GaN HEMT 12 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Gain:
10 to 20 dB
Supply Voltage:
28 V
more info
Description: Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
42 to 43 dBm (P5dB)
Power(W):
15.85 W
Supply Voltage:
28 Vdc
Package:
Ceramic
more info

The Largest Database of GaN on SiC Transistors

everything RF has listed GaN on SiC Transistors i.e GaN on Silicon Carbide from the leading manufacturers. Use the parametric search tool to find GaN Transistors that meet your specification. Once you find the GaN on SiC transistor that you are looking for, you can download its datasheet or view its product specifications. You can then get a quotation for the product. RFQ's generated via everything RF are routed to the manufacturer and their distributors in your region, so they will get back to you with the requested information. 

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