GaN on SiC Transistors

381 GaN on SiC Transistors from 10 Manufacturers meet your specification.

GaN on SiC (Silicon Carbide) Transistors from the leading manufacturers are listed below. Use the filters below to narrow down on the antenna that meets your spec.

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Subcategory : GaN on SiC Transistor  reset
Description: 9 to 10 GHz GaN MMIC for Radar Power Amplifiers
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
9 to 11 GHz
Power:
45.44 dBm
Power(W):
35 W
Supply Voltage:
28 V
more info
Description: 200 Watts, 50 Volts, 200 uS, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.01 to 53.8 dBm
Power(W):
239.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description: 300 W RF GaN Power Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2400 to 500 MHz
Power:
54.77 dBm
Power(W):
300 W
Gain:
14.9 to 15.3 dB
Supply Voltage:
50 V
more info
Description: GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.94 to 55.56 dBm
Power(W):
312.1 to 360 W
Gain:
11.4 to 12.6 dB
Supply Voltage:
52 Vdc
more info
Description: GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54
Power(W):
90 W
Gain:
9 dB
Supply Voltage:
50 V
more info
Description: Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
42 to 43 dBm (P5dB)
Power(W):
15.85 W
Supply Voltage:
28 Vdc
Package:
Ceramic
more info
Description: 165 W, GaN on SiC Power transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Supply Voltage:
48 V
Package:
Flanged
more info
Description: DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description: 120 Watts, 50 Volts, 300 us, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 to 51.76 dBm
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description: GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
53.77 to 54.05 dBm
Power(W):
238.4 to 254.1 W
Gain:
13.1 to 13.8 dB
Supply Voltage:
52 Vdc
more info

The Largest Database of GaN on SiC Transistors

everything RF has listed GaN on SiC Transistors i.e GaN on Silicon Carbide from the leading manufacturers. Use the parametric search tool to find GaN Transistors that meet your specification. Once you find the GaN on SiC transistor that you are looking for, you can download its datasheet or view its product specifications. You can then get a quotation for the product. RFQ's generated via everything RF are routed to the manufacturer and their distributors in your region, so they will get back to you with the requested information. 

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