RF Energy Transistors

92 RF Energy Transistors from 3 Manufacturers meet your specification.

RF Energy Transistors from the leading manufacturers are listed below. Use the filters below to narrow down on the antenna that meets your spec.

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Description: 250 W LDMOS Power Transistor for 2.4 GHz RF Energy Applications
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2400 to 2500 MHz
Power:
54 dBm
Power(W):
250 W
Gain:
13.2 to 14.4 dB
Supply Voltage:
32 V
more info
Description: 20 W LDMOS Power Transistor from 10 MHz to 2700 MHz
Application Industry:
Broadcast, ISM, Radar, RF Energy
Transistor Type:
LDMOS
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
400 to 2700 MHz
Power:
43 dBm
Power(W):
20 W
Supply Voltage:
28 V
more info
Description: 2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PO-780S-2
more info
Description: 2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description: 896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-1280S-2
more info
Description: 2450 MHz RF LDMOS Transistor for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
40.97 dBm
Power(W):
12.5 W
Supply Voltage:
28 V
Package:
DFN 4 × 6 PLASTIC
more info
Description: 2 Watt, GaN on Silicon Transistor from 10 MHz to 2700 MHz
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description: 350 W RF LDMOS Transistors for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
902 to 928 MHz
Power:
55.44 dBm
Power(W):
350 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
Description: 10 MHz to 2.7 GHz, GaN on Si HEMT for RF Energy, Aerospace & Defence Application
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description: 50 W GaN on Silicon Transistor for RF Energy Applications
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info

The Largest Database of RF Energy Transistors

everything RF has listed RF Energy Transistors from the leading manufacturers. Use the parametric search tool to find RF Energy Transistors that meet your specification. Once you find the RF Energy transistor that you are looking for, you can download its datasheet or view its product specifications. You can then get a quotation for the product. RFQ's generated via everything RF are routed to the manufacturer and their distributors in your region, so they will get back to you with the requested information.

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