RF Energy Transistors

89 RF Energy Transistors from 3 Manufacturers meet your specification.
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Description: 2450 MHz RF LDMOS Transistor for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
40.97 dBm
Power(W):
12.5 W
Supply Voltage:
28 V
Package:
DFN 4 × 6 PLASTIC
more info
Description: RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
915 MHz
Power:
55.44 dBm
Power(W):
349.95 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
Description: 10 MHz to 2.7 GHz, GaN on Si HEMT for RF Energy, Aerospace & Defence Application
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description: 50 W GaN on Silicon Transistor for RF Energy Applications
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description: 2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PO-780S-2
more info
Description: 896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-1280S-2
more info
Description: 2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description: 2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description: 900 to 930 MHz, LDMOS Transistor
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
900 to 930 MHz
Power:
56.99 dBm
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT502A
more info
Description: 2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-4
more info
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