RF Transistors

12 RF Transistors from MACOM meet your specification.
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  • Subcategory : RF Energy Transistor
  • Manufacturers : MACOM
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:10 MHz to 2.7 GHz, GaN on Si HEMT for RF Energy, Aerospace & Defence Application
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:2 Watt, GaN on Silicon Transistor from 10 MHz to 2700 MHz
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:10 MHz to 2.7 GHz, GaN on Si HEMT for RF Energy, Aerospace & Defence Application
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:50 W GaN on Silicon Transistor for RF Energy Applications
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PO-780S-2
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-1280S-2
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:10 MHz to 2.7 GHz, GaN on Si HEMT for RF Energy, Aerospace & Defence Application
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info

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