RF Transistors

71 RF Transistors from Ampleon meet your specification.
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  • Subcategory : RF Energy Transistor  
  • Manufacturers : Ampleon  
Description: 250 W LDMOS Power Transistor for 2.4 GHz RF Energy Applications
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2400 to 2500 MHz
Power:
54 dBm
Power(W):
250 W
Gain:
13.2 to 14.4 dB
Supply Voltage:
32 V
more info
Description: 20 W LDMOS Power Transistor from 10 MHz to 2700 MHz
Application Industry:
Broadcast, ISM, Radar, RF Energy
Transistor Type:
LDMOS
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
400 to 2700 MHz
Power:
43 dBm
Power(W):
20 W
Supply Voltage:
28 V
more info
Description: 900 to 930 MHz, LDMOS Transistor
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
900 to 930 MHz
Power:
56.99 dBm
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT502A
more info
Description: 10 to 600 MHz, Power LDMOS transistor
Application Industry:
Aerospace & Defence, ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
58.45 dBm
Power(W):
699.84 W
Supply Voltage:
50 V
Package:
SOT1204-2
more info
Description: 2.496 to 2.69 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
51.76 dBm
Power(W):
149.97 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
Description: DC to 3.5 GHz, Broadband RF power GaN HEMT
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Supply Voltage:
50 V
Package:
SOT1228B
more info
Description: 1.805 to 2.17 GHz, LDMOS 2-stage integrated Doherty MMIC
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Supply Voltage:
28 V
Package:
SOT1211-2
more info
Description: 1.805 to 1.88 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Supply Voltage:
32 V
Package:
SOT1258-7
more info
Description: DC to 3.5 GHz, Broadband RF power GaN HEMT
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Supply Voltage:
50 V
Package:
SOT1228A
more info
Description: 300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Application Industry:
Aerospace & Defence, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.01 dBm
Power(W):
316.96 W
Supply Voltage:
32 V
Package:
SOT502A
more info

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