RF Transistors

94 RF Transistors from 7 Manufacturers meet your specification.
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  • Supply Voltage : 28 to 28 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
  • Frequency : 0 to 3000 MHz
Description:120 W, RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 2.5 GHz
Supply Voltage:
28 V
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:130 W GaN HEMT Transistor from DC to 2.5 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 2.5 GHz
Power:
51.14 dBm
Power(W):
130 W
Gain:
20 dB
Supply Voltage:
28 V
more info
Description:100 Watt GaN on SiC HEMT from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
17.4 dB
Supply Voltage:
12 to 60 V
more info
Description:55 Watt, GaN Power Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
47.4 dBm
Power(W):
54.95 W
Gain:
16 dB
Supply Voltage:
28 V
more info
Description:100W, DC to 3.5 GHz, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Power(W):
106.91 W
Gain:
14 dB
Supply Voltage:
28 V
more info
Description:120 W, RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 2.5 GHz
Power:
50 dBm
Power(W):
100 W
Supply Voltage:
28 V
more info
Description:180-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 2.5 GHz
Supply Voltage:
28 V
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Power(W):
106.91 W
Gain:
14 dB
Supply Voltage:
28 V
more info

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