RF Transistors

100 RF Transistors from 8 Manufacturers meet your specification.
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  • Supply Voltage : 28 to 28 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
  • Frequency : 800 to 900 MHz
Description:90-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
500 MHz to 2.5 GHz
Supply Voltage:
28 V
more info
Description:700 MHz to 1 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
700 MHz to 1 GHz
Power:
44 dBm
Power(W):
25.12 W
Gain:
20 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:700 MHz to 1 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
47 dBm
Power(W):
50.12 W
Gain:
20 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:100 to 1000 MHz, 12 dB GaN Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
100 MHz to 1 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
12.5 dB
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:15 Watt, 0.03 to 1.2 GHz, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
18.4 dB
Supply Voltage:
12 to 55 V
Package:
6 x 5 mm
more info
Description:15 W GaN RF Transistor from 0.03 to 1.215 GHz
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
30 MHz to 1.215 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
12 to 32 V
Package:
5 x 6 mm
more info
Description:70 Watt, RF Power GaN HEMT from 0.5 to 3.5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
0.5 to 3 GHz
Power(W):
85 to 109 W
Supply Voltage:
28 V
more info
Description:120 W, RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 2.5 GHz
Supply Voltage:
28 V
more info
Description:120 W, RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 2.5 GHz
Power:
50 dBm
Power(W):
100 W
Supply Voltage:
28 V
more info
Description:2.9 W GaN HEMT Power Amplifier from 0.5 to 3 GHz
Application Industry:
ISM, Radar, Electronic Warfare, Military
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
0.5 to 3 GHz
Power:
33.01 to 34.62 dBm
Power(W):
2 to 2.9 W
Supply Voltage:
28 V
Package:
Dual-Flat-No-Lead (DFN)
more info

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