RF Transistors

73 RF Transistors from 9 Manufacturers meet your specification.
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  • Supply Voltage : 50 to 50 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
  • Frequency : 0 to 3000 MHz
Description:60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
VHF to 3 GHz
Power:
39.03 dBm
Power(W):
8 W
Supply Voltage:
50 V
more info
Description:15-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
VHF to 3 GHz
Power:
33.01 dBm
Power(W):
2 W
Supply Voltage:
50 V
more info
Description:100-W, DC CGHV40100 3-GHz, 50-V, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 3 GHz
Power(W):
115.88 W
Supply Voltage:
50 V
more info
Description:30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
VHF to 3 GHz
Power:
36.02 dBm
Power(W):
4 W
Supply Voltage:
50 V
more info
Description:2998 MHz, 12.6 dB GaN Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.998 GHz
Power:
56.99 to 58.45 dBm
Power(W):
699.84 W
Gain:
12 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:3.1 GHz, 13 to 15 dB Gain GaN on SiC HEMT
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3.1 GHz
Power:
44 to 46 dBm
Power(W):
25.12 to 39.81 W
Gain:
13 to 15 dB
Supply Voltage:
50 V
more info
Description:2.856 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
56.99 dBm
Power(W):
500.03 W
Gain:
11.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:60-W, DC to 2700-MHz, 50-V, GaN HEMT for LTE and Pulse-Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 2.7 GHz
Power(W):
79.98 W
Supply Voltage:
50 V
more info

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