RF Transistors

110 RF Transistors from 8 Manufacturers meet your specification.
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  • Supply Voltage : 50 to 50 V  
  • Technology : GaN on SiC  
  • Transistor Type : HEMT  
  • Frequency : 800 to 900 MHz  
Description: 250 W GaN HEMT Transistor from DC to 2 GHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
54.1 to 54.8 dBm
Power(W):
257 to 302 Watts
Supply Voltage:
50 V
more info
Description: 900 MHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
900 MHz
Power:
48 dBm
Power(W):
63.1 W
Supply Voltage:
50 V
more info
Description: 900 MHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
900 MHz
Power:
49.5 dBm
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description: 900 MHz, 18 to 20 dB Gain GaN on SiC HEMT
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
900 MHz
Power:
551 dBm
Power(W):
100 to 125.89 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description: 900 MHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
900 MHz
Power:
50 dBm
Power(W):
100 W
Supply Voltage:
50 V
more info
Description: 900 MHz, 19 to 21 dB Gain GaN on SiC HEMT
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
900 MHz
Power:
48.5 to 49.5 dBm
Power(W):
70.79 to 89.1 W
Gain:
19 to 21 dB
Supply Voltage:
50 V
more info
Description: 900 MHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
900 MHz
Power:
50.5 dBm
Power(W):
112.2 W
Supply Voltage:
50 V
more info
Description: 1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
46.02 dBm
Power(W):
39.99 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description: 1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
60 dBm
Power(W):
1000 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description: 1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
59.03 dBm
Power(W):
799.83 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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