GaN on Si Transistors

52 GaN on Si Transistors from 2 Manufacturers meet your specification.

GaN on Si Transistors are active semiconductor devices that are used to modify the properties of an input signal (used to amplify or switch). GaN on Si Transistors from the leading manufacturers are listed below. Use the parametric search tools to narrow down on products by type, frequency, technology, power, gain, voltage and various other parameters. View product details, download datasheets and get quotes on matching products.

Selected Filters Reset All
  • Technology: GaN on Si
Description:Gallium Nitride 28V, 25W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
40 to 43.97 dBm
Package Type:
Flanged
Power(W):
24.95 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:Gallium Nitride 28V, 100W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
20 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Power:
60 dBm
Package Type:
Surface Mount
Power(W):
1000 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-1280S-2
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:50 W GaN on Silicon Transistor for RF Energy Applications
Application Industry:
RF Energy, Wireless Communication, Radar
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
46.99 dBm
Package Type:
Surface Mount
Power(W):
50 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-4
more info
MAGe-102425-300 Image
Description:300 Watt Low Cost GaN Power Transistor in a Plastic Package
Application Industry:
ISM, RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
0 to 2.5 GHz
Package Type:
Flanged
Gain:
18 dB
Supply Voltage:
50 V
Package:
TO-272S-4
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:2.4 to 2.5 GHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PO-780S-2
more info

FiltersReset All

Manufacturers

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Package Type