GaN on Si Transistors

52 GaN on Si Transistors from 2 Manufacturers meet your specification.

GaN on Si Transistors are active semiconductor devices that are used to modify the properties of an input signal (used to amplify or switch). GaN on Si Transistors from the leading manufacturers are listed below. Use the parametric search tools to narrow down on products by type, frequency, technology, power, gain, voltage and various other parameters. View product details, download datasheets and get quotes on matching products.

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  • Technology: GaN on Si
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:896 to 928 MHz, GaN on Si HEMT for RF Energy Application
Application Industry:
RF Energy
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
896 to 928 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
ACu-780S-2
more info
Description:20 MHz to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Test...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
20 MHz to 2.7 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Gain:
10.5 to 12 dB
Supply Voltage:
28 V
Package:
4x4mm 24-lead PQFN
more info
Description:900 MHz to 1.4 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
900 MHz to 1.4 GHz
Power:
58.13 dBm
Package Type:
Surface Mount
Power(W):
650.13 W
Gain:
16.5 dB
Supply Voltage:
50 V
Package:
AC-780B-2/AC-780S-2
more info
Description:900 MHz to 1.4 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
900 MHz to 1.4 GHz
Power:
50.97 dBm
Package Type:
Surface Mount
Power(W):
125.03 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
AC-400B-2/AC-400S-2
more info
Description:2.9 to 3.3 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.9 to 3.3 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Gain:
20.5 dB
Supply Voltage:
32 V
Package:
PQFN-28
more info
Description:DC to 2 GHz GaN Transistor in a Plastic Package
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
19 dB
Supply Voltage:
48 V
Package:
TO272
more info
Description:2.7 to 3.1 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Power:
52.55 dBm
Package Type:
Surface Mount
Power(W):
179.89 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
AC-360B-2/AC-360S-2
more info
Description:500 Watt GaN on Silicon Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse
Frequency:
1200 to 1400 MHz
Power:
57 dBm
Package Type:
Surface Mount
Power(W):
500 W
Gain:
16 dB
Supply Voltage:
50 V
more info
NPTB00050B Image
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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