RF Transistors - HEMT

561 RF Transistors from 13 Manufacturers meet your specification.
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Transistor Type : HEMT  reset
Description: 9 to 10 GHz GaN MMIC for Radar Power Amplifiers
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
9 to 11 GHz
Power:
45.44 dBm
Power(W):
35 W
Supply Voltage:
28 V
more info
Description: 1800 Watt, GaN on SiC Discrete Transistor from 1 to 1.1 GHz
Application Industry:
Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.1 GHz
Power:
62.7 dBm
Power(W):
1862 W
Gain:
22.5 dB
Supply Voltage:
65 V
more info
Description: 500 Watt GaN on Silicon Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse
Frequency:
1200 to 1400 MHz
Power:
57 dBm
Power(W):
500 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description: 200 Watts, 50 Volts, 200 uS, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.01 to 53.8 dBm
Power(W):
239.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description: Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Power(W):
8 W
Gain:
15 dB
more info
Description: GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54
Power(W):
90 W
Gain:
9 dB
Supply Voltage:
50 V
more info
Description: Ceramic Package GaN AM060WX-BI-R Power HEMT DC-6GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
42 to 43 dBm (P5dB)
Power(W):
15.85 W
Supply Voltage:
28 Vdc
Package:
Ceramic
more info
Description: 20 W Power Transistor from DC to 18 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
42.04 dBm
Power(W):
16 W
Supply Voltage:
30 V
more info
Description: DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description: 225 MHz to 2.6 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
225 MHz to 2.6 GHz
Gain:
12 dB
Supply Voltage:
28 V
more info

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