RF Transistors - HEMT

562 RF Transistors from 13 Manufacturers meet your specification.
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Transistor Type : HEMT  reset
Description: 3.1 to 3.5 GHz GaN HEMT for S-Band Radar Power Amplifiers
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 dBm
Power(W):
120 W
Gain:
13 dB
Supply Voltage:
50 V
more info
Description: 75 W GAN Transistor from DC to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.6 GHz
Power:
49 dBm
Power(W):
79.4 W
Gain:
3dB Compression 19.5 dB
Supply Voltage:
48 V
more info
Description: 500 Watt GaN on Silicon Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse
Frequency:
1200 to 1400 MHz
Power:
57 dBm
Power(W):
500 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description: 280 Watts, 50 Volts, 200 us, 20% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
54.47 to 55.25 dBm
Power(W):
334.97 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description: Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Power(W):
8 W
Gain:
15 dB
more info
Description: GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54
Power(W):
90 W
Gain:
9 dB
Supply Voltage:
50 V
more info
Description: 20 W Power Transistor from DC to 18 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
42.04 dBm
Power(W):
16 W
Supply Voltage:
30 V
more info
Description: 1800 Watt, GaN on SiC Discrete Transistor from 1 to 1.1 GHz
Application Industry:
Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.1 GHz
Power:
62.7 dBm
Power(W):
1862 W
Gain:
22.5 dB
Supply Voltage:
65 V
more info
Description: 225 MHz to 2.6 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
225 MHz to 2.6 GHz
Gain:
12 dB
Supply Voltage:
28 V
more info
Description: 200 Watts, 50 Volts, 200 uS, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.01 to 53.8 dBm
Power(W):
239.88 W
Supply Voltage:
50 V
Package:
55-QP
more info

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