LDMOS Transistors

709 LDMOS Transistors from 6 Manufacturers meet your specification.

LDMOS Transistors are active semiconductor devices that are used to modify the properties of an input signal (used to amplify or switch). LDMOS Transistors from the leading manufacturers are listed below. Use the parametric search tools to narrow down on products by type, frequency, technology, power, gain, voltage and various other parameters. View product details, download datasheets and get quotes on matching products.

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  • Transistor Type: LDMOS
C5H3337N110D Image
Description:Gan Wideband Doherty Power Transistor from 3.3 to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN
Frequency:
3.3 to 3.7 GHz
Power:
55.05 dBm
Package Type:
Surface Mount
Power(W):
320 W
Gain:
14 dB
Package:
QFN
more info
SD57045-01 Image
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Commercial, Base Station
Transistor Type:
LDMOS, FET
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Power(W):
45 W
Supply Voltage:
28 V
more info
Description:2 kW CW/Pulsed LDMOS Power Transistor from 1 to 400 MHz
Application Industry:
Broadcast, Communication, ISM
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Power:
63 dBm
Package Type:
Earless Flanged
Supply Voltage:
65 V
more info
SD57030 Image
Description:30 W, LDMOS RF Transistor operating at 945 MHz
Application Industry:
Commercial, Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW
Frequency:
945 MHz
Power:
44.77 dBm
Power(W):
30 W
Supply Voltage:
28 V
more info
Description:RF Power LDMOS Transistor from 1 to 1300 MHz
Application Industry:
Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.3 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Supply Voltage:
28 VDC
more info
Description:450 W CW/Pulsed LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Broadcast, ISM, Cellular, Radar
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
54.77 to 56.63 dBm
Power(W):
300 to 450 W
Supply Voltage:
50 to 65 V
more info
SD57030-01 Image
Description:30 W, LDMOS RF Transistor operating at 945 MHz
Application Industry:
Commercial, Base Station
Transistor Type:
LDMOS, FET
CW/Pulse:
CW
Frequency:
945 MHz
Power:
44.77 dBm
Power(W):
30 W
Supply Voltage:
28 V
more info
Description:RF Power LDMOS Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
40 to 50 VDC
more info
A2V07H400-04N Image
Description:107 W LDMOS Power Transistor from 420 to 851 MHz
Application Industry:
Base Station, Cellular
Transistor Type:
LDMOS
Frequency:
420 to 692 MHz
Power:
57.3 dBm (3dB)
Power(W):
537 W (3dB)
Supply Voltage:
0 to 55 V
more info
SD57045 Image
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Commercial, Base Station
Transistor Type:
LDMOS, FET
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Power(W):
45 W
Supply Voltage:
28 V
more info

What are LDMOS Transistors?

LDMOS Transistors, or Laterally-Diffused Metal-Oxide-Semiconductor Transistors are a category of power transistors that are designed for high power RF applications. LDMOS transistors provide better power saturation capability and minimize distortion at higher power levels. These transistors also feature improved RF performance, ruggedness and reliability compared to GaAs Transistors. They are most often used in Wireless Infrastructure applications like base stations.

An RF Transistor is a semiconductor device that is used to amplify and switch electronic signals.

Important Parameters to consider in LDMOS Transistor:

  • Operating Frequency: This is the frequency range at which an LDMOS Transistor is fully functional or provides the best performance.
  • Output Power (W/dBm): It is the magnitude of power that the transistor will provide at the output after amplifying a signal.
  • Gain (dB): The gain of an LDMOS Transistor is the ratio of output to input power/amplitude. This is measured in dB.
  • Power/Drain Efficiency (%): Efficiency is a measure of how well a device converts one energy source to another. In case of a transistor drain efficiency is the ratio of output RF power to the input DC power.
  • Package Type: Based on the required application, the package type for the LDMOS transistor can be selected. There are a number of different package types available - Connectorized, Surface Mount, Die etc.

everything RF lists LDMOS Transistors from the leading manufacturers. Use the parametric search tools to narrow down on products based on your requirement. Once you find parts that meet your specification, download the data sheet, compare products and request quotations. Inquiries sent via everything RF are directed to the manufacturers who get back to you with a quote or information.

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