RF Transistors - Page 10

229 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: SuperApex Corporation, Integra Technologies, Inc.
Description:1030 MHz, 10.4 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
40 to 41.49 dBm
Package Type:
Flanged
Power(W):
14.09 W
Gain:
10.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:3100 to 3400 MHz, 9.5 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
9.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:2700 to 3100 MHz, 9.7 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
9.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:135 Watts GaN on SiC Transistor for S-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
51.3 dBm
Package Type:
Flanged
Power(W):
134.9 W
Gain:
13.5 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description:2900 to 3100 MHz, 8.7 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.1 GHz
Power:
51.9 to 53.52 dBm
Package Type:
Flanged
Power(W):
224.91 W
Gain:
8.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:2.4 to 2.9 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.4 to 2.9 GHz
Power:
56.02 to 57.99 dBm
Package Type:
Flanged
Power(W):
629.51 W
Gain:
13 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.13 to 59.29 dBm
Package Type:
Flanged
Power(W):
849.18 W
Gain:
12.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:3100 to 3500 MHz, 9.3 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
36.53 dBm
Package Type:
Flanged
Power(W):
4.5 W
Gain:
9.3 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:1.03 to 1.09 GHz, LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.39 to 55.89 dBm
Package Type:
Flanged
Power(W):
388.15 W
Gain:
14.9 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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