RF Transistors - Page 10

239 RF Transistors from NXP Semiconductors meet your specification.
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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS
MRFE6VP100H Image
Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780--4
more info
MMRF1315N Image
Description:Broadband RF Power LDMOS Transistor, 500-1000 MHz, 60 W CW, 28 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
500 MHz to 1 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
MRF6VP121KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
965 MHz to 1.215 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
A2T18H160-24S Image
Description:Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
MMRF1312H Image
Description:1200 W Pulsed Power LDMOS Transistor from 900 to 1215 MHz
Application Industry:
Aerospace & Defence, Avionics, Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
900 to 1215 MHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
52 V
more info
A3T18H400W23S Image
Description:71 W RF Power LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Chip
Power(W):
71 W
Gain:
16.8 to 17 dB
Supply Voltage:
28 V
more info
MRF6V2150N Image
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info
MRFX1K80H Image
Description:65 V LDMOS Transistor from 1.8 to 400 MHz
Application Industry:
ISM, Aerospace & Defence, Radar, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 400 MHz
Power:
62.55 dBm
Package Type:
Flanged
Power(W):
1800 W
Supply Voltage:
65 V
Package:
NI-1230H-4S
more info
A2T18H450W19S Image
Description:1.8GHZ 450W NI1230S-4S4S
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
49.49 dBm
Package Type:
Flanged
Power(W):
88.92 W
Supply Voltage:
32 Vdc
Package:
NI--1230S--4S4S
more info
MRF6VP3450HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info

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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS

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