RF Transistors - Page 10

298 RF Transistors from 2 Manufacturers meet your specification.
Selected Filters Reset All
  • Manufacturers : Mitsubishi Electric US, Inc., NXP Semiconductors
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
43.01 dBm
Power(W):
20 W
Supply Voltage:
24 V
more info
Description:RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 1.3 GHz
Power:
55.5 dBm
Power(W):
354.81 W
Supply Voltage:
50 V
Package:
OM--780G--4L PLASTIC
more info
Description:175 to 870 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 870 MHz
Power:
38.45 to 39.03 dBm
Power(W):
8 W
Gain:
11.5 to 13.8 dB
Supply Voltage:
7.2 V
more info
Description:RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 1.3 GHz
Power:
55.5 dBm
Power(W):
354.81 W
Supply Voltage:
50 V
Package:
OM--780--4L PLASTIC
more info
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 MHz to 1.215 GHz
Power:
42.55 to 49.54 dBm
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info
Description:Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 960 MHz
Power:
41.46 dBm
Power(W):
14 W
Supply Voltage:
28 V
Package:
CASE 1265-09, STYLE 1 TO-270-2 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 600 MHz
Power:
54.77 dBm
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
51.76 dBm
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 450 MHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency (MHz)

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)