RF Transistors - Page 2

54 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: SuperApex Corporation, Mitsubishi Electric US, Inc.
Description:100W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11.5 to 12.5 dB
Supply Voltage:
2 V
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
48.75 to 49.24 dBm
Package Type:
Flanged
Power(W):
83.95 W
Supply Voltage:
12.5 V
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
12.5 V
more info
Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Package Type:
Flanged
Gain:
14 dB
Supply Voltage:
12.5 V
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
16 dBm
Package Type:
Flanged
Power(W):
0.04 W
Supply Voltage:
2.5 V
more info
Description:2.4 to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
2.4 to 4 GHz
Package Type:
Flanged
Gain:
13 to 18 dB
Supply Voltage:
2 V
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Package Type:
Flanged
Power(W):
26.91 to 33.88 W
Supply Voltage:
24 to 27 V
Package:
GF-68
more info
Description:DC to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 520 MHz
Power:
39.03 to 39.54 dBm
Package Type:
Flanged
Power(W):
8.99 W
Gain:
10 dB
Supply Voltage:
7.2 V
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM, RF Energy
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info

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