RF Transistors - Page 2

229 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: SuperApex Corporation, Integra Technologies, Inc.
Description:High Power Broadband GaN Transistor from 0.1 to 6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
0.1 to 6 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
12 W
Supply Voltage:
50 V
more info
Description:3100 to 3500 MHz, 7.4 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
26.9 dBm
Package Type:
Flanged
Power(W):
0.49 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:1200 to 1400 MHz, 10.6 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
45.05 to 49.02 dBm
Package Type:
Flanged
Power(W):
79.8 W
Gain:
10.6 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:2.90 to 3.15 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.90 to 3.15 GHz
Power:
48.75 to 53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
13.3 dB
Supply Voltage:
45 V
Package:
Ceramic
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:960 to 1215 MHz, 8.5 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
57.78 to 59.78 dBm
Package Type:
Flanged
Power(W):
950.6 W
Gain:
8.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:250 W Power Transistor from 420 to 450 MHz for Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
420 to 450 MHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
23 to 25 dB
Supply Voltage:
50 V
more info
Description:3000 MHz, 11.7 dB Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3 GHz
Power:
27.78 dBm
Package Type:
Flanged
Power(W):
0.6 W
Gain:
11.7 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:1030 MHz, 8.4 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
53.98 to 55.95 dBm
Package Type:
Flanged
Power(W):
393.55 W
Gain:
9.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 to 55.91 dBm
Package Type:
Flanged
Power(W):
389.94 W
Gain:
17.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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