RF Transistors - Page 2

239 RF Transistors from NXP Semiconductors meet your specification.
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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS
A2T18H450W19S Image
Description:1.8GHZ 450W NI1230S-4S4S
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
49.49 dBm
Package Type:
Flanged
Power(W):
88.92 W
Supply Voltage:
32 Vdc
Package:
NI--1230S--4S4S
more info
A2T14H450-23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 1452-1511 MHz, 93 W AVG., 31 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.452 to 1.511 GHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
92.9 W
Supply Voltage:
31 V
Package:
OM--1230--4L2S PLASTIC
more info
A2T09D400-23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
92.9 W
Supply Voltage:
28 V
Package:
OM--1230--4L2S PLASTIC
more info
MHT1108N Image
Description:2450 MHz RF LDMOS Transistor for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
40.97 dBm
Package Type:
Surface Mount
Power(W):
12.5 W
Supply Voltage:
28 V
Package:
DFN 4 × 6 PLASTIC
more info
MRF8P8300HS Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
790 to 820 MHz
Power:
49.82 dBm
Package Type:
Flanged
Power(W):
95.94 W
Supply Voltage:
28 V
Package:
NI--1230--4H
more info
AFT23S160W02GS Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
28 V
Package:
NI-780GS-2L
more info
MRF8P8300H Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
790 to 820 MHz
Power:
49.82 dBm
Package Type:
Flanged
Power(W):
95.94 W
Supply Voltage:
28 V
Package:
NI--1230--4H
more info
MRF8P29300HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.19 dBm
Package Type:
Flanged
Power(W):
262.42 W
Supply Voltage:
30 V
Package:
CASE 375E--04, STYLE 1 NI--1230S
more info
MRF101AN Image
Description:100 W LDMOS RF Transistor
Application Industry:
Broadcast, Aerospace & Defence, ISM, Radar, Broadc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 250 MHz
Power:
50 dBm
Package Type:
Through Hole
Power(W):
100 W
Package:
TO-220
more info
Description:N--Channel Enhancement--Mode Lateral MOSFETs
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2110 to 2170 MHz
Power:
47.99 dBm
Package Type:
Chip
Power(W):
63 W
Gain:
16.4 to 16.5 dB
Supply Voltage:
48 V
more info

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