RF Transistors - Page 3

239 RF Transistors from NXP Semiconductors meet your specification.
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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS
MRFE6S9160HR3 Image
Description:Single N-CDMA Lateral N-Channel RF Power MOSFET, 880 MHz, 35 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
28 V
Package:
CASE 465-06, STYLE 1 NI-780
more info
MRF6VP3450HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
MRF6V12250H Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
MMRF1020-04GN Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
AFV09P350-04N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
Description:Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
Application Industry:
Aerospace & Defence, ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270--2 PLASTIC
more info
MMRF1015GN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info
AFT09MP055GN Image
Description:Airfast Broadband RF Power LDMOS Transistor, 764-941 MHz, 55 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
764 to 941 MHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Supply Voltage:
12.5 V
Package:
TO--270WB--4 GULL
more info
AFV121KH Image
Description:Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
MMRF1007H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
965 MHz to 1.215 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info

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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS

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