RF Transistors - Mitsubishi Electric US, Inc. - Page 3

47 RF Transistors from Mitsubishi Electric US, Inc. meet your specification.
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  • Manufacturers: Mitsubishi Electric US, Inc.
Description:175 to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 520 MHz
Power:
38.45 to 39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Gain:
10 dB
Supply Voltage:
7.2 V
more info
Description:DC to 527 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 527 MHz
Power:
35.56 to 36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
3.6 V
more info
Description:890 to 950 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
890 to 950 MHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
0.0031 W
Gain:
14 dB
Supply Voltage:
12.5 V
more info
Description:DC to 941 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 941 MHz
Power:
37.4 to 37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Gain:
8.9 dB
Supply Voltage:
7.2 V
more info
Description:DC to 24.3 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 24.3 GHz
Power:
11.5 dBm
Package Type:
Flanged
Power(W):
0.01 W
Supply Voltage:
1.5 V
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
16 dBm
Package Type:
Flanged
Power(W):
0.04 W
Supply Voltage:
2.5 V
more info
Description:175 to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 520 MHz
Power:
33.01 to 34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
16 dB
Supply Voltage:
7.2 V
more info
Description:DC to 470 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 470 MHz
Power:
33.62 dBm
Package Type:
Flanged
Power(W):
2.3 W
Gain:
10 dB
Supply Voltage:
3.6 V
more info
Description:DC to 527 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 527 MHz
Power:
30 to 32.04 dBm
Package Type:
Flanged
Power(W):
1.6 W
Gain:
15 dB
Supply Voltage:
7.2 V
more info
Description:DC to 520 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 520 MHz
Power:
29.3 to 31.13 dBm
Package Type:
Flanged
Power(W):
0.85 W
Gain:
14 dB
Supply Voltage:
7.2 V
more info

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