RF Transistors - Page 3

298 RF Transistors from Ampleon meet your specification.
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  • Manufacturers: Ampleon
  • Transistor Type: LDMOS
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 1.805 to 1.88 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.805 to 1.88 GHz
Power:
38.5 to 39.6 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 9.12 W
Supply Voltage:
28 V
more info
Description:LDMOS Transistor from 2700 to 3100 MHz for Radar Applications
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
56.28 dBm
Package Type:
Flanged
Power(W):
425 W
Gain:
13 dB
Supply Voltage:
32 V
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 10 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 MHz to 1.5 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1223-2
more info
Description:45.44 dBm (35 W), LDMOS Transistor from 1 to 1400 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.4 GHz
Power:
42.43 to 45.44 dBm
Package Type:
Surface Mount
Power(W):
34.99 W
Supply Voltage:
32 V
Package:
SOT467C
more info
Description:2000 W LDMOS Power Transistor for the 400 MHz ISM Band
Application Industry:
Radar, Aerospace & Defence, Broadcast, Wireless In...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 400 MHz
Power:
60.97 to 63.22 dBm
Package Type:
Ceramic, 2-Hole Flanged
Power(W):
1250 to 2100 W
Supply Voltage:
30 to 65 V
more info
Description:48.75 dBm (75 W), LDMOS Transistor from 3400 to 3800 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.8 GHz
Power:
48.75 dBm
Package Type:
Surface Mount
Power(W):
74.99 W
Supply Voltage:
30 V
Package:
SOT1239B
more info
Description:550 W LDMOS Power Transistor from 2110 to 2180 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2110 to 2180 MHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
93 W
Gain:
16.2 dB
Supply Voltage:
30 V
Package:
6 leaded flange
more info
Description:50 dBm (100 W), LDMOS Transistor from 2300 to 2400 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT502B
more info
Description:A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
56.99 to 57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539A
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 400 to 900 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 to 900 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539A
more info

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