RF Transistors - Page 4

239 RF Transistors from NXP Semiconductors meet your specification.
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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS
MMRF1304GNR1 Image
Description:Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info
A2T18H455W23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 1805-1880 MHz, 87 W AVG., 31.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
49.4 dBm
Package Type:
Flanged
Power(W):
87.1 W
Supply Voltage:
31.5 V
Package:
OM--1230--4L2S PLASTIC
more info
AFV121KHS Image
Description:Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
MRF1517N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
A2T26H300-24S Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 2496-2690 MHz, 60 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
MHT1004GN Image
Description:300 Watt CW RF LDMOS Transistor for RF Cooking Applications
Application Industry:
ISM, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.45 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
300 W
Supply Voltage:
32 V
Package:
OM--780G--2L PLASTIC
more info
A2T27S020N Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 400-3800 MHz, 2.5 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
400 MHz to 2.7 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
AFT05MP075N Image
Description:Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 520 MHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
TO--270WB--4
more info
AFM907N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 136-941 MHz, 7 W, 7.5 V WIDEBAND
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
Package:
DFN 4 x 6
more info
MRF6V3090N Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 MHz to 1.215 GHz
Power:
42.55 to 49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info

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