RF Transistors - Page 4

66 RF Transistors from 3 Manufacturers meet your specification.
Selected Filters Reset All
  • Frequency : 1800 to 2000 MHz
  • Supply Voltage : 28 to 28 V
  • Technology : Si
  • Transistor Type : LDMOS
Description:46.02 dBm (40 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Supply Voltage:
28 V
Package:
SOT1212-2
more info
Description:49.03 dBm (80 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Supply Voltage:
28 V
Package:
SOT1212-2
more info
Description:1.805 to 2.17 GHz, LDMOS 2-stage integrated Doherty MMIC
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Supply Voltage:
28 V
Package:
SOT1211-2
more info
Description:1.805 to 2.17 GHz, LDMOS 2-stage integrated Doherty MMIC
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Supply Voltage:
28 V
Package:
SOT1212-2
more info
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
40.79 dBm
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
TO--270WBG--15 PLASTIC
more info
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
40.79 dBm
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
TO--270WB--15 PLASTIC
more info
Description:2-Stage LDMOS Doherty MMIC from 1800 to 2200 MHz
Application Industry:
Cellular
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 2.2 GHz
Power:
48.4 dBm
Power(W):
69.18 W
Supply Voltage:
28 V
more info
Description:1.805 to 2.2 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.2 GHz
Supply Voltage:
28 V
Package:
SOT1275-1
more info
Description:GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.6 to 2.2 GHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
Description:GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.6 to 2.2 GHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info

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