RF Transistors - Page 6

229 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: SuperApex Corporation, Integra Technologies, Inc.
Description:2998 MHz, 12.6 dB GaN Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.998 GHz
Power:
56.99 to 58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Gain:
12 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:2700 to 2900 MHz, 11.4 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
53.98 to 55.98 dBm
Package Type:
Flanged
Power(W):
396.28 W
Gain:
11 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
51.14 to 51.3 dBm
Package Type:
Flanged
Power(W):
134.9 W
Gain:
14.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1200 to 1400 MHz, 8.81 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
51.14 to 54.15 dBm
Package Type:
Flanged
Power(W):
260.02 W
Gain:
8.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:2.856 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
11.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1030 to 1090 MHz, 9.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
9.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:2856 MHz, 10.4 dB Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
38.75 dBm
Package Type:
Flanged
Power(W):
7.5 W
Gain:
10.5 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:960 to 1215 MHz, 10.7 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.77 to 46.26 dBm
Package Type:
Flanged
Power(W):
42.27 W
Gain:
10.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info

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