RF Transistors - Page 8

239 RF Transistors from NXP Semiconductors meet your specification.
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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS
A2T26H300-24S Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 2496-2690 MHz, 60 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
A2I25D025N Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
35.05 dBm
Package Type:
Flanged
Power(W):
3.2 W
Supply Voltage:
28 V
Package:
TO--270WB--17 PLASTIC
more info
MRF8S7170N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 50 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
618 to 803 MHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
28 V
Package:
OM--780--2L PLASTIC
more info
MRF6VP41KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
A2I25D012N Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
33.42 dBm
Package Type:
Flanged
Power(W):
2.2 W
Supply Voltage:
28 V
Package:
TO--270WB--15 PLASTIC
more info
A2T18S160W31GS Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-1995 MHz, 32 W AVG. 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.99 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--780GS--2L2LA
more info
MW6S010GN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
450 MHz to 1.5 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
CASE 1265A-03, STYLE 1 TO-270-2 GULL PLASTIC
more info
MMRF1020-04N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780--4L PLASTIC
more info
A2T18H160-24S Image
Description:Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
A2T18H455W23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 1805-1880 MHz, 87 W AVG., 31.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
49.4 dBm
Package Type:
Flanged
Power(W):
87.1 W
Supply Voltage:
31.5 V
Package:
OM--1230--4L2S PLASTIC
more info

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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS

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