RF GaN Transistors - Page 8

935 GaN Transistors from 20 Manufacturers meet your specification.
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  • Technology : GaN
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
54.95 W
Gain:
15.7 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:200 W, GaN on SiC Power Transistor from 2.7 to 3.1 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Supply Voltage:
36 V
more info
Description:14 W GaN Power Transistor from DC to 10 GHz
Application Industry:
Radar, Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 10 GHz
Power:
41.46 dBm
Power(W):
14 W ( Saturated)
Supply Voltage:
30 V
more info
Description:GaN-on-SiC HEMT Transistorfrom 1.2 to 1.4 GHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
54.96 dBm(CW, at 3dB Compression), 56.7 dBm(Pulsed
Power(W):
313 W(CW, at 3dB Compression), 468 W(Pulsed
Gain:
17.5 dB(CW), 17.8 dB(Pulsed)
Supply Voltage:
45 V(CW), 50 V(Pulsed)
more info
Description:400 W GaN on SiC HEMT from 2500 to 2700 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 2.7 GHz
Power:
56.02 dBm (P3dB)
Power(W):
400 W (P3dB)
Gain:
15 dB
Supply Voltage:
48 V
more info
Description:2.7 to 3.1 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.1 GHz
Gain:
15 dB
Supply Voltage:
50 V
Package:
Pallet
more info
Description:490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
56.9 dBm
Power(W):
490 W
Gain:
13 to 14.4 dB
Supply Voltage:
48 V
more info
Description:Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Power(W):
8 W
Gain:
15 dB
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
27.99 W
Gain:
18.7 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info
Description:50 W GaN-on-SiC Power Transistor from 9 to 10 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9 to 10 GHz
Power:
47 dBm
Power(W):
50 W
Gain:
10 to 12 dB
Supply Voltage:
50 V
Package:
Ceramic lid
more info
Description:43 W, X-Band Radar GaN Semiconductor from 9.2 to 9.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9.2 to 9.5 GHz
Power:
46.4 dBm
Power(W):
43.7 W
Gain:
21.4 dB
more info
Description:112.2 W, GaN HEMT Transistor from 1.03 to 1.09 GHz
Application Industry:
Cellular, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Supply Voltage:
48 V
Package:
680BU
more info

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