RF Transistors - Page 9

258 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers : Mitsubishi Electric US, Inc., Integra Technologies, Inc.
Description:2.4 to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
2.4 to 4 GHz
Gain:
13 to 18 dB
Supply Voltage:
2 V
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 to 55.91 dBm
Power(W):
389.94 W
Gain:
17.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49.03 dBm
Power(W):
79.98 W
Supply Voltage:
24 V
more info
Description:960 MHz to 1.25 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.25 GHz
Power:
54.77 dBm
Power(W):
299.92 W
Gain:
13.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
48.45 dBm
Power(W):
69.98 W
Supply Voltage:
24 V
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
56.99 dBm
Power(W):
500.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
43.01 dBm
Power(W):
20 W
Supply Voltage:
24 V
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
56.99 dBm
Power(W):
500.03 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
46.99 dBm
Power(W):
50 W
Supply Voltage:
24 V
more info
Description:1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.090 GHz
Power:
59.03 dBm
Power(W):
799.83 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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