This slideshow lists the most viewed and downloaded RF & Microwave Transistors on everything RF. We have over 1,000 Products from the leading manufacturers listed on everything RF.
The MRFE6VP6600N from Freescale is a 1.8 MHz to 600 MHz LMDOS transistor housed in a plastic package. It delivers up to 600 W of CW power with an efficiency of 74.6% and has a gain of 22.9 dB. It provides a 30 percent reduction in thermal resistance compared to ceramic-packaged transistors. This thermal resistance, combined with CW power, high efficiency and gain, can help lower system costs through enhanced performance and reduced cooling materials. The MRFE6VP6600N is ideal for use in industrial and broadcast applications including CO2 lasers, plasma generation equipment, MRI amplifiers and particle accelerators, as well as FM and VHF broadcast transmitters. It requires a 50 V supply. Click here to see products specs
The ILD1214EL200 from Integra Technologies is a high power pulsed LDMOS transistor that operates from 1.215 GHz to 1.400 GHz. It provides peak pulse power of 200 W with 75% drain efficiency and up to 12.60 dB of gain. The transistor requires 30 V while drawing 15 A of current. It is housed in a thermally enhanced gold metal based package and is ideal for Military, Commercial, Space, Aerospace and SATCOM applications. Click here to see products specs
The NPT2024 is a wideband transistor that operates from DC to 2.7 GHz. It is the first transistor that has been developed on MACOM's 4th generation GaN on Silicon (GaN on Si) process. This process provides performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology. The NPT2024 supports CW, pulsed, and linear operation with output power levels up to 200 W (53 dBm). Featuring 50 V operation, this device offers CW operation of 16 dB gain at 1.5 GHz, and 60% drain efficiency. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar. Click here to see products specs
The MAGX-000912-650L0 from MACOM is a GaN on SiC HEMT pulsed power transistor that operates from 960 to 1215 MHz. It provides peak power of up to 650 Watts, with a gain of 21 dB and drain efficiency of 62 %. The transistor has a pulse of 128 µs, duty of 10 % and requires a supply of +65 V (at 33 A current) .This rugged and robust transistor, boasts a mean time to failure (MTTF) of 600 years.It can be used for civilian and military applications. Click here to see products specs
The TGF2977-SM from Qorvo is a GaN on SiC HEMT transistor that operates from DC to 12 GHz. It provides up to 6 W of power with a linear gain of 13 dB and efficiency of 50%. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in military radar and civilian radar applications. Click here to see products specs
The BLP05H6110XR from NXP Semiconductors is a LDMOS power transistor that operates from 3 MHz (HF) to 600 MHz. This transistor provides an output of 110 Watts with a gain of 27 dB and an efficiency of 75 %. It requires a 50 V supply and is ideal for broadcast and industrial applications. Click here to see products specs
The PTVA102001EA from Infineon Technologies is a UHF and L-Band LDMOS Transistor that operates from 1030 to 1090 MHz. It provides a gain of 18 dB, P1dB of 200 W and an efficiency of 57 %. It requires a supply of 50 V. The transistor is available in an H-36265-2 package type. Click here to see products specs
The MGFS39G38L2 from Mitsubishi Electronics is a GaN-HEMT transistor that has been developed for use in 4G/LTE Base Station Transceivers from 3.5 GHz to 3.8 GHz. This GaN-HEMT provides up to 39 dBm of saturated power with a gain of 19 dB and drain efficiency of 67 %. It requires a supply of 50 V and is available in a compact package. Click here to see products specs
The ATF-35143 from Avago Technologies is a low noise psuedomorphic HEMT for use in 1.9 GHz systems. It is ideal for Wireless LAN, WLL/RLL, MMDS applications and the first stage of base station LNA due to the excellent combination of low noise figure and high linearity. It has a gain of 17.5 dB, a noise figure of 0.5 dB and provides up to 20 dBm of power at 1 dB. The transistor is available in SOT-343 SMT plastic package and with tape and reel packaging options. Click here to see products specs
The MHT1003N is a 2450 MHz high power RF transistor from Freescale that has been developed for RF heating products. It has a 250 watt output with 58% power added efficiency and a gain of 15 dB. The transistor requires a 32 V supply and is available in a flanged plastic package. Click here to see product specs
The CGHV31500F from Cree is a GaN HEMT that operates from 2700 MHz to 3100 MHz. It provides a saturated output power up to 600 Watts, has a power gain of 12.75 dB and efficiency of up to 60%. The transistor is available in a ceramic/metal flange package and is ideal for S-Band Radar Applications. Click here to see product specs
The MS1051 from Microsemi is a Class C epitaxial silicon NPN planar transistor that operates from 1 MHz to 30 MHz. It has a gain of 12 dB, an IMD of -30 dBc and provides an output power of 100 W. This transistor utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. It requires a supply of 12.5 V and is ideal for HF communications. Click here to see products specs
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