Demonstration of the Wolfspeed GTRA38480 at IMS2019

At IMS 2019, Wolfspeed demonstrated the GTRA38480 Asymmetric GaN Device in a ceramic package using a Doherty Test Fixture. The GTRA384802FC is a high power GaN on SiC HEMT transistor that operates from 3600 to 3800 MHz. It provides an output power up to 400 W with gain of 13.7 dB and efficiency of 62%. The transistor requires a 48 V power supply and is available in a thermally enhanced package with earless flange. It is ideal for multi-standard cellular power amplifier applications.The device includes pre-matched Main and Peak transistors in a single package.

Click here to view detailed specifications of the GTRA384802FC Asymmetric GaN Device.

Tags : GaNHEMTSiCTransistorIMS 2019