GaN on SiC HEMT Transistor 50 V, 0 45 um Process 100 W Transistor

Ampleon released Gen3 GaN-on-SiC HEMT process. This is 50 V, 0.45 um process, which can operate between 18 through 50 V. It delivers outstanding broadband linearity, ideal for communication and broadband amplifiers. As a demonstration of this superior broadband linearity, we will show a 100 W CLF3H0035S-100 transistor performing in a broadband amplifier, designed and tuned to a 500-2500 MHz instantaneous frequency range.