Groundbreaking 1800 W with 65 V LDMOS Technology

  • Webinar Date

    May 10, 2017

  • Webinar Time

    8am PT/ 11am ET

Webinar Overview

This webinar will cover the fundamentals of 65 V LDMOS technology and the new 1800 W RF power transistor. NXP Semiconductors will discuss the five key benefits of increasing the voltage from 50 V to 65 V, improving the ease of use to speed RF design. NXP will also discuss the new MRFX1K80 1800 W performance and show how to move from existing solutions to this latest product.

Key webinar topics will include:

  • Explore the significant benefits of 65 V LDMOS over 50 V LDMOS technology
  • The basics of NXP’s RF design strategy
  • Performance review of the MRFX1K80H device at various frequencies
  • How to easily migrate from earlier generations of rugged LDMOS products

Presenter Bio:

Franck Nicholls runs the RF Industrial product line within NXP’s RF Power business unit, which comprises LDMOS and GaN transistors for Industrial, Scientific and Medical, broadcast, land mobile radio and aerospace applications.

Prior to this position, Franck held several marketing and business development responsibilities for NXP and previously Freescale in Europe. Franck received his M.Sc. degree from Telecom ParisTech in France.