GaN Electrothermal Modeling for 5G MMIC Power Amplifier Designs

  • Date: ┬áMarch 6, 2019
  • Time: 8am PT / 11am ET

Webinar Overview

This webinar presents the characterization of a short gate-length (0.15µm), gallium nitride (GaN) on silicon carbide (SiC) process for mmWave applications up to 40 GHz. The transistor characterization utilizes multiple techniques including pulsed IV and small-signal S-parameters and EM simulation to extract frequency-dependent parasitics and nonlinear behavior along with load-pull measurements for model validation. In addition, a comprehensive study of the thermal device behavior was conducted using transient simulation to generate an electrothermal model.

The models developed by UMS have been organized into the UMS GH15 process design kit (PDK) for the NI AWR Design Environment platform and Microwave Office circuit simulator, to support the development of monolithic microwave integrated circuits (MMICs) targeting mmWave telecommunications. This webinar will present several design examples using the GH15 PDK including a 10 W Ka-band (29.5 36 GHz) PA and a 2 W integrated front end for 24 30 GHz combining a GH15 PA with other GaAs functions in a plastic package for 5G applications.

Presenter Bio:

Eric Leclerc joined UMS at its creation in 1996 to work on new power device development, characterization and modeling. He is presently the field marketing manager within the UMS Marketing and Sales organization. Prior to his current role, Mr. Leclerc was the UMS foundry manager for several years. Born in France, Eric obtained a research degree in Physics in 1984 and received a Solid State Physics DEA in 1985 at Paris XI University (Orsay). Learn more about UMS at: ums-gaas.com.