Designing X-Band PAs Using SMT Plastic Packaged GaN Transistors
December 3, 2015
10am PT/ 1pm ET/ 6pm UTC
The use of over-molded SMT plastic packaging greatly simplifies handling and assembly and reduces unit cost. However, as operating frequencies and RF output power increase so do the challenges of using SMT packaging. This webcast described the design of Power Amplifiers (PAs) at X-band using plastic packaged SMT GaN transistors. The design approach is illustrated with the detailed description of the design, layout, EM simulation, fabrication and evaluation of a single stage 5W X-Band GaN PA. The amplifier is optimized for the 9.3 to 9.5GHz band, has 11dB small signal gain, provides more than +37dBm output power at 3dB gain compression with a corresponding drain efficiency of greater than 55%. The design is based on a commercially available discrete 0.25µm GaN transistor (the TGF2977-SM from Qorvo) mounted on Rogers 4003 PCB. Fast drain switching circuitry is also included on the same PCB to facilitate pulsed operation with a turn-on time of just 20ns.
Who should view:
Developers of high power solid-state PAs or systems houses who make use of high power solid-state PAs.
Liam Devlin, CEO, Plextek RFI
Liam is the CEO of Plextek RFI, a UK based design house specialising in the design and development of RFICs, MMICs and microwave/mm-wave modules. He has led the design and development of over 70 custom ICs on a range of GaAs, GaN and Si processes at frequencies up to 90GHz. He has also developed microwave and mm-wave sub-systems using a variety of technologies. He was previously Chief Designer with Marconi Caswell where he designed GaAs ICs for both the commercial product line and for customer specific applications. Prior to this, Liam was employed by Philips Research Laboratories. He graduated from Leeds University in 1988 with a first class honours degree in electrical and electronic engineering and has published over 40 technical papers.