A Balanced 24-Volt GaAs FET Amplifier for 2.11 to 2.17 GHz
High Frequency Electronics, Fujitsu Compound Semiconductor, Inc.
The development of 24-volt drain bias GaAs FETs has been the “holy grail” of power device design. For a long time, the achievement of 24-volt devices seemed just around the corner. Fujitsu has now placed into volume production a series of 24-volt Vds GaAs FET quasi-enhancement-mode devices. The three devices have equivalent modulated output power of 250 W, 150 W and 10 W. These devices have modulated performances equivalent to higher power devices and cover a 2.11 to 2.17 GHz instantaneous bandwidth.
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