Noise Reduction in Transistor Oscillators: Part 2—Low Frequency Loading and Filtering

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  • Author: Andrei Grebennikov
Optimization of low frequency loading and feedback cir-cuit can help minimize the 1/f noise in the tran-sistor oscillators. In a first approximation, a gate voltage noise generator connected in series with a noise-free nonlinear two-port cir-cuit can model the low frequency 1/f noise in FET devices. So, if the low-frequency voltages applied to gate-source and drain-source termi-nals are reduced, the resulting sideband com-ponents around the oscillation frequency due to nonlinear mixing of these voltages will be reduced as well.