Understanding Base Biasing Influence on the Large Signal Behavior in HBTs

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  • Author: Byoungyong Lee and Larry Dunleavy
Large-signal behav-ior of HBT devices can depend strong-ly on the type of source used to bias the base of the devices. Understand-ing of this behavior is advanced using sample device measurements and model simulations. The device used is a wafer-level InGaP/GaAs HBT represented with a modified Gummel-Poon non-linear model. Results show that the use of constant voltage source allowed for a higher power gain compression as compared to constant current-source use. Once properly setup, simulations with the extracted non-lin-ear model accurately predict power compres-sion behavior for either base source type.