High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications
U.H. Andre, E.J. Crescenzi, R.S. Pengelly, A.R. Prejs, & S.M. Wood
GaN HEMT power transistors are a key enabling tech-nology for the successful design of WiMAX, WiBro and next generation radio systems. This arti-cle describes the design and performance of a number of demonstration amplifiers using Cree GaN HEMTs, including a Doherty circuit providing the highest reported performance for a WiMAX power amplifier.
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