Reliability assessment of AlGaN/GaN HEMT Technology on SIC for 48 V applications
AlGaN/GaN based HEMTs on SiC are a promising technology for the next generation of high power amplifiers because of their high power density, high peak efficiencies, high breakdown voltage and superior thermal dissipation. Although excellent performance has been demonstrated on SiC substrates, the long term reliability of the devices under high voltage and high channel temperatures is a subject of active investigation. This paper presents an assessment of the reliability of AlGaN/GaN HEMTs fabricated on semi-insulating SiC substrates at 48V.
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