MMIC Design for Wireless Broadband Access

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  • Author: A.W. Dearn and L.M. Devlin
GaAs-based MMICs are widely used in telecommunication products from frequencies below 1GHz to mm-wave applications at 60GHz and beyond. A wide range of device technologies is available, each with particular advantages. These include: InGaP Heterojunction Bipolar Junction Transistor (HBT) processes, which find wide commercial adoption for high power and high linearity RF amplifiers, and low-cost broadband amplifiers. Pseudomorphic High Electron Mobility Transistor (pHEMT) processes, which are favoured for active mm-wave circuits and high power RF switches. Vertical PIN diode processes, which have very low parasitic capacitance and find applications in mm-wave switches and broadband limiters. This paper describes examples of MMICs designed using all of the above technologies, covering operating frequencies from DC to 45GHz.