NI AWR Design Environment Load-Pull Simulation Supports the Design of Wideband High-Efficiency PAs

This application note explores the design of power amplifiers using the load-pull scripts that are available in NI AWR Design Environment™ Microwave Office circuit design software. Using the example of a Cree CGH40010F gallium nitride (GaN) high-electron mobility transistor (HEMT) in a Class F PA at 2000 MHz, this paper demonstrates how power-added efficiency (PAE) is maximized by optimizing source and load pull at the fundamental frequency, plus second and third harmonics (2f0 and 3f0).