This paper presents a highly integrated S-Band radar pallet amplifier using GaN technology with a sequencing circuit capable of drain pulse modulation. The design of a 350W S-Band pallet comprised of two packaged GaN on Silicon Carbide hybrid power transistors, impedance matching networks, combining structures and the relevant sequencing and bias circuitry will be described. The 350W pallet amplifier is a 50O input and output impedance amplifier operating with a single positive supply.
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