A Compact 5-6 GHz T/R Module Based on SiGe BiCMOS and SOI that Enhances 256 QAM 802.11ac WLAN Radio Front-end Designs

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  • Author: Chun-Wen Paul Huang, Mark Doherty, Lui (Ray) Lam, Anthony Quaglietta, Mark Johnson, and Bill Vaillancourt
A compact high linearity 4.9-5.9 GHz T/R FEM is presented, which consists of a SiGe BiCMOS PA and a SOI switched LNA realized in an ultra-compact 2.3 x 2.3 x 0.33 mm3 QFN package. The Tx chain has > 30 dB gain and meets -35 dB DEVM up to 17 dBm at 3.3 V and 20 dBm at 5V, insensitive to modulation bandwidths and transmission data length up to 4 mS. With digital pre-distortion (DPD), the PA can be down-biased to save 30 mA while maintaining its linearity. The Rx chain features <2.5 dB NF and 12 dB gain with 4 dBm IIP3 and 8 dB bypass attenuator with 29 dBm IIP3. All the unique features enhance the front-end circuit designs of complex 802.11ac radios.