CMOS WiFi RF Front-Ends for Mobile Handset Applications

This document presents test results for comparison of noise contributions from different WLAN power amplifiers and front-end modules in the WCDMA receive band-1 (2.11GHz to 2.17GHz) from multiple tier-1 vendors developed on different technology processes including bulk RF CMOS, BiCMOS SiGe HBT, GaAs HBT, and PHEMT. This white paper also shows how WiFi RF Front-Ends from RFaxis based on bulk CMOS silicon technologies can greatly improve performance of a mobile handset.

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