A Simulation-Based Flow for Broadband GaN Power Amplifier Design
This application note demonstrates a simulation-based methodology for broadband power amplifier (PA) design using load-line, load-pull, and real-frequency synthesis techniques. The design highlighted in this application note is a Class F amplifier created using the Qorvo 30 W gallium nitride (GaN) high electron mobility transistor (HEMT) T2G6003028-FL. Goals for this design included a minimum output power of 25 W, bandwidth of 1.8 - 2.2 GHz, and maximum power-added efficiency (PAE). The design procedure was performed using the Modelithics GaN HEMT nonlinear model for the Qorvo transistor in conjunction with NI AWR Design Environment™, inclusive of Microwave Office circuit design software, Modelithics Microwave Global Models, and the AMPSA Amplifier Design Wizard (ADW).
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