Design of a High-Efficiency Broadband GaN HEMT Doherty Amplifier for New-Generation Cellular Transmitters

This application note describes the design of an innovative Doherty amplifier architecture using 200-W high-efficiency broadband 1.8-2.7 GHz GaN HEMT technology, which achieved average efficiencies of 50-60 percent for output powers up to 100 W and significantly reduced the cost, size, and power consumption of the transmitters. The designers used the NI AWR Design Environment platform, specifically Microwave Office circuit design software.