Prospects for a BiCFET III-V HBT Process
Peter Zampardi, Mike Sun, Cristian Cismaru, and Jiang Li
While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we demonstrate a material structure and process capable of allowing HBTs plus n and p-channel MESFETs. We report on the DC and AC characteristics of the HBT and the p-FET DC performance. The n-FET is unaffected by this material design.
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