Passive Intermodulation and Power Handling for High Power RF MEMS Switches
Ian Burke, Darryl Evans, Chris Keimel, Marten Seth, Xu Zhu
This paper describes the theory and demonstrates the feasibility of implementing a high power, low loss and high linearity RF switch on fused silica substrate through RF MEMS technology. Commercial two-tone intermodulation test shows IMD3 90~110dBm at 850 MHz and 90dBm at 3.6 GHz.
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