Characteristics of GaAs Spike Doped Collectors

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  • Author: Peter Zampardi, Kai Kwok, Cristian Cismaru, Mike Sun, and Anthony Lo

Spike-doped collector designs have recently been studied in both Si BJT and GaAs HBTs as a way to improve the device linearity while still maintaining ruggedness. In this work, we present and discuss – for the first time – the very interesting output characteristics of these devices (unique Ic-Vce curves) and how they are influenced by the device design. We also explore the improvement in cut-off frequency versus current and application of these devices to actual power amplifiers and the resulting changes in ruggedness.