A Novel High-Performance V-Band GaN MMIC HPA for the QV-LIFT Project
Joël Moron, Rémy Leblanc, Peter Frijlink, François Lecourt
This paper reports the development of a V-band Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMIC) high power amplifier in the framework of the Horizon 2020 project QVLIFT. Design manufacturing and on-wafer pulsed measurements of the first run were performed by OMMIC and demonstrate peak output power of about 5W. ERZIA Technologies has designed the connectorized module for Continuous Wave (CW) characterization of the circuit and has performed the measurements of the module, demonstrating RF power in excess of 3 W at the satellite V-band. Overall experimental measurements are in line with the theoretical predictions and they represent state of the art.
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