Design of RF CMOS Power Amplifier for UWB Applications

This thesis describes the design of a key RF block in the UWB transceiver – the Power Amplifier. For the first part of this work, a PA suitable for MB-OFDM specifications was designed and fabricated in TSMC 0.18µm CMOS technology. The class-AB PA is able to cover the lower UWB frequency band from 3.1 GHz to 4.75 GHz and delivers an output power of -2 dBm at 4 GHz. Simulated results show a gain of 19±2 dB achieved over the entire band and the PA consumes 36.54 mW from a 1.8V supply.